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FLC257MH-8 - C-Band Power GaAs FET

Description

The FLC257MH-8 is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.

Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance.

Features

  • High Output Power: P1dB = 34.0dBm(Typ. ).
  • High Gain: G1dB = 8.0dB(Typ. ).
  • High PAE: ηadd = 35%(Typ. ).
  • ProvenReliability.
  • Hermetic Metal/Ceramic Package.

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Datasheet Details

Part number FLC257MH-8
Manufacturer Eudyna Devices
File Size 114.34 KB
Description C-Band Power GaAs FET
Datasheet download datasheet FLC257MH-8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FLC257MH-8 C-Band Power GaAs FET FEATURES • High Output Power: P1dB = 34.0dBm(Typ.) • High Gain: G1dB = 8.0dB(Typ.) • High PAE: ηadd = 35%(Typ.) • ProvenReliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC257MH-8 is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Drain-Source Voltage Gate-Source Voltage VDS VGS Total Power Dissipation PT Tc = 25°C Storage Temperature Tstg Channel Temperature Tch Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1.
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